GaN蓝光LED电极接触电阻的优化  

Optimization of Contact Resistance of GaN Blue LED Electrodes

作　　者：裴风丽[1] 陈炳若[1] 陈长清[1] 

机构地区：[1]武汉大学物理科学与技术学院

出　　处：《半导体光电》2006年第6期742-744,755,共4页Semiconductor Optoelectronics

基　　金：上海微系统所传感技术联合国家重点实验室开放基金项目(SKt0401)

摘　　要：通过分析LED的工作电压和晶圆上两相邻N电极间电阻来讨论快速退火(RTA)和表面处理对GaN基蓝光LED接触电极的影响。研究了p-GaN表面处理对Ni/Au与p-GaN接触电阻的影响。结果表明,用KOH清洗p-GaN表面比用HCl清洗更能有效地改善Ni/Au与p-GaN的接触电阻。讨论了在氧和氮混合气氛下两种退火温度对P电极接触电阻的影响,当退火温度从570℃升到620℃时接触电阻升高。研究了氮气氛下不同退火温度和时间对LED电极接触的影响,发现在480℃下连续退火对N接触有利,但却使P接触变差,而450℃、10 min的氮气氛退火能同时得到较好P接触和N接触。The effects of rapid thermal annealing （RTA） and surface treatment on the contact resistance of GaN-based blue LED electrodes have been investigated by analyzing the operating voltage and the resistance between adjacent N electrodes. The effect of surface treatment on the Ni/Au-p-GaN contact resistance has been also discussed. The result shows that KOH solution can be more effective than HCl solution in reducing the contact resistance. The impacts of two different annealing temperatures in Oz and Nz ambient on the p-type contact resistance has been reviewed, showing that the resistance increases when temperature rises from 570℃ to 620 ℃. Finally, the effects of different temperature and annealing time in Nz ambient have been examined, with the conclusion that at 480℃, continuous annealing can improve the ntype contact resistance while degrading the p-type one, nevertheless, both good p-type and n-type contacts can be achieved through annealing in 10 rain at 450℃.

关 键 词：GAN基蓝光LED 接触电阻 RTA 表面处理 

分 类 号：TN312.8[电子电信—物理电子学]