扩Zn^(2+)多孔硅的光致发光性能  

Photoluminescence Performance of Zn^(2+)-Diffused Porous Silicon

作　　者：张玉娟[1] 贾振红[2] 涂楚辙[2] 

机构地区：[1]新疆大学物理学院,新疆乌鲁木齐830046 [2]新疆大学信息科学与工程学院,新疆乌鲁木齐830046

出　　处：《半导体光电》2006年第6期745-747,共3页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(60267001);中国科学院"西部之光"项目;新疆维吾尔自治区高校科学研究计划项目

摘　　要：用快扩散方式把Zn2+掺入到单晶硅中,再用阳极电化学腐蚀方法把样品腐蚀成多孔硅。利用荧光分光光度计测试了样品的光致发光特性,结果表明Zn2+的扩散增强了多孔硅的荧光发射,并分别利用扫描电镜和傅里叶变换红外光谱仪研究了多孔硅薄膜的表面形态和样品的红外吸收光谱。Zn^2＋ ions have been doped into single-crystalline silicon making use of quick diffusion method. Fluorescence photospectrometer has been used to analyze the photoluminescence properties of the samples which are fabricated by anode electrochemical etching,and the results show that the luminescence intensity of porous silicon is increased after Zn^2＋ diffusion. Moreover, the surface morphology of the samples and FTIR absorption spectra have been investigated by means of scanning electron microscope and Fourier transform infrared spectroscopy.

关 键 词：多孔硅 Zn^2+扩散 光致发光 

分 类 号：O482.31[理学—固体物理]