S^(2-)掺杂对Ce^(3+)-SiO_2材料发光性能的影响  

EFFECT OF SULFUR ION DOPING ON THE LUMINESCENCE PROPERTIES OF CERIUM ION-DOPED SILICA

作　　者：徐光青[1] 郑治祥[1] 汤文明[1] 吴玉程[1] 

机构地区：[1]合肥工业大学材料科学与工程学院,合肥230009

出　　处：《硅酸盐学报》2007年第1期10-15,共6页Journal of The Chinese Ceramic Society

基　　金：合肥工业大学中青年创新基金(103-037016)资助项目。

摘　　要：通过化学掺杂及气氛控制掺杂的手段对Ce3+–SiO2材料进行S2–掺杂改性,并对其光吸收和光致发光性能进行分析。研究阴离子掺杂对基体氧化硅材料缺陷态发光以及Ce3+的发光波长及强度的影响。结果表明:采用化学掺杂S2–可明显改变400～600℃热处理条件下344nm和355nm紫外发光强度与热处理温度的关系,但对Ce3+–SiO2材料在700～900℃热处理条件下产生的445nm左右的蓝色发光影响不大;采用气氛控制手段实现S2–掺杂则可明显改变蓝色发光带的发光波长和发光强度,使发光波长由445nm移向428nm且发光强度为Ce3+–SiO2样品的十倍左右。Sulfur ions were added to cerium ion-doped silica by chemical doping and ambience control doping. The effect of the S^2- doping on the luminescence properties of Ce^3＋-doped SiO2 was investigated. The relationship of the heat treatment temprature and the intensity of luminescence at 344 nm and 355 nm can be completely changed for doping S^2- on the Ce^3＋-doped SiO2 by chemical doping at 400--600℃, but the effect on the luminescence at 445 nm is negligible at 700-900℃. The wavelength and intensity of the luminescence band at 445 nm can be obviously changed for doing S^2- on Ce^3＋-doped SiO2 by ambience control. The wavelength shift from 445 nm to 428 nm and the intensity is about 10 times than that of Ce^3＋-doped SiO2.

关 键 词：硫离子 铈离子掺杂二氧化硅 化学掺杂 气氛控制掺杂 

分 类 号：TN304[电子电信—物理电子学]