TiO_2掺杂对ZnO-Bi_2O_3-TiO_2低压压敏电阻电学性能的影响  

EFFECT OF TiO_2 ADDITIVE ON THE ELECTRIC PROPERTIES OF ZnO-Bi_2O_3-TiO_2 LOW-VOLTAGE VARISTORS

作　　者：林枞[1] 徐政[1] 孙丹峰[2] 

机构地区：[1]同济大学材料科学与工程学院,上海200092 [2]苏州中普电子有限公司,苏州215011

出　　处：《硅酸盐学报》2007年第1期21-25,共5页Journal of The Chinese Ceramic Society

摘　　要：通过研究微米粉体、纳米粉体和纳米胶体TiO2掺杂的ZnO压敏电阻的电性能,发现纳米胶体TiO2掺杂的ZnO压敏电阻具有较低的电压梯度和漏电流,而非线性系数较高。对电性能结果的分析表明:在ZnO–Bi2O3–TiO2低压压敏电阻中,晶界击穿电压不是一个固定值;漏电流中的线性分量对TiO2掺杂的ZnO压敏电阻电学性能影响很大。The electric properties of ZnO varistors doped with TiO2 in different forms including micrometer powder, nanometer powder and nanometer sol were presented. The results show that lower breakdown voltage, leakage current and better nonlinear coefficient are obtained for the sample doped with nano-sol TiO2. The breakdown voltage of grain boundary is not a constant for the ZnO-Bi2O3-TiO2 low-voltage varistors. And the linear part of the leakage current has great effects on the electric properties of the samples doped with TiO2.

关 键 词：氧化锌压敏电阻 纳米胶体 二氧化钛掺杂 电性能 

分 类 号：TQ174[化学工程—陶瓷工业]