立方氮化硅的合成与提纯  

SYNTHESIS AND PURIFICATION OF CUBIC SILICON NITRIDE

作　　者：姚怀[1] 唐敬友[1] 刘雨生[2] 刘党库[1] 唐翠霞[1] 贺红亮[2] 杨世源[1] 

机构地区：[1]西南科技大学材料科学与工程学院,四川绵阳621010 [2]中国工程物理研究院流体物理研究所冲击波物理与爆轰物理实验室,四川绵阳621900

出　　处：《硅酸盐学报》2007年第1期31-34,共4页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(50472102);西南科技大学引进人才基金(ZK043030);西南科技大学重点学科建设(ZK053003);中国工程物理研究院科学技术基金(20050864)资助项目。

摘　　要：设计和采用有炸药驱动平面飞片加载器和圆桶形样品回收室的装置,用非高纯的α–Si3N4粉体和铜粉作原料合成了c–Si3N4。在该装置中完整的回收到冲击波压缩的实验样品。当冲击压力与温度分别约为50GPa和2300K时,原料中约有85%的α–Si3N4转化为c–Si3N4。回收样品在440K左右经9～10h与氢氟酸反应处理后,c–Si3N4粉体的纯度接近100%。An apparatus consisting of a planar metal disc flyer driven by explosives and a cylindrical chamber was designed to synthesize cubic silicon nitride using the mixtures of impure a-Si3N4 and copper powders as starting materials. Shock-compressed samples were successfully recovered in the setup. About 85% of a-Si3N4 in the raw materials can be transformed into c-Si3N4 under the shock-compression conditions of about 50 GPa and 2300 K. Hydrofluoric acid was used to purify c-Si3N4 powders from the shocked samples. The purity of c-Si3N4 reached 100% after the recovered samples were treated with hydrofluoric acid at 440K for 9-10h.

关 键 词：立方氮化硅 冲击波压缩 合成 提纯 

分 类 号：O771[理学—晶体学]