绝缘栅双极型晶体管升压斩波器的设计  

Design on Insulated Gate Bipolar Transistor Boost Converter

作　　者：宋丹苹[1] 邱忠才[2] 黄治清[1] 

机构地区：[1]西南交通大学电气工程学院,四川成都610031 [2]西南交通大学 峨眉校区电气系,四川峨眉614202

出　　处：《电源技术应用》2006年第12期35-38,共4页Power Supply Technologles and Applications

摘　　要：介绍了一种用大功率绝缘栅极双极型晶体管(IGBT)模块SKM75GA L123D和驱动模块EXB840设计的直流升压斩波器。所设计的高频、大电流斩波器具有输出直流电压纹波小,性能可靠等优点。A design of boost converter using high-power insulated bipolar transistor IGBT module named SKM75GAL123D and driver module named EXB840 is introduced. This designed boost converter with high frequency and large current is reliable and has merits such as low output DC voltage ripples.

关 键 词：模块 升压斩波器 IGBT 

分 类 号：TM46[电气工程—电器]