Luminescence Properties of Tb^(3+)-Doped LuAG Films Prepared by Pechini Sol-Gel Method  

作　　者：游宝贵 尹民 张慰萍 郭海 林林 

机构地区：[1]Structure Research Laboratory, Chinese Academy of Sciences, Hefei 230026, China,Physics Department, University of Science and Technology of China, Hefei 230026,China [2]Department of Physics, Zhejiang Normal University, Jinhua 321004,China [3]Physics Department,University of Science and Technology of China, Hefei 230026,China

出　　处：《Journal of Rare Earths》2006年第6期745-748,共4页稀土学报（英文版）

基　　金：Project supported by the National High Technology Research and Development Programof China(863 Program) (2002 AA324070) and the National Natural Science Foundation of China (50332050)

摘　　要：Lu3Al5O12（LuAG） thin films with different Tb^3＋ concentration were prepared on carefully cleaned （111 ） silicon wafer by a Peehini process and dip-coating technique. Heat treatment was performed in the temperature range from 800 to 1100 ℃. The crystal structure was analyzed by XRD. The results show that LuAG film starts to crystallize at about 900 ℃, and the particle size increases with the sintering temperature. Excitation and emission spectra of Tb^3＋ doped LuAG films were measured. The effects of heat-treatment temperature and doping concentration of Th3 ＋ on the luminescent properties were also investigated. For a comparison study, Th^3＋-doped LuAG powders were also prepared by the same sol-gel method.Lu3Al5O12（LuAG） thin films with different Tb^3＋ concentration were prepared on carefully cleaned （111 ） silicon wafer by a Peehini process and dip-coating technique. Heat treatment was performed in the temperature range from 800 to 1100 ℃. The crystal structure was analyzed by XRD. The results show that LuAG film starts to crystallize at about 900 ℃, and the particle size increases with the sintering temperature. Excitation and emission spectra of Tb^3＋ doped LuAG films were measured. The effects of heat-treatment temperature and doping concentration of Th3 ＋ on the luminescent properties were also investigated. For a comparison study, Th^3＋-doped LuAG powders were also prepared by the same sol-gel method.

关 键 词：SOL-GEL LUAG luminescence properties thin film concentration dependence rare earths 

分 类 号：O482.31[理学—固体物理]