高性能通道式电子倍增器  

HIGH PERFORMANCE CHANNELTRON ELECTRON MULTIPLIERS

作　　者：高培德[1] 毕联训[1] 

机构地区：[1]中国科学院上海冶金研究所

出　　处：《功能材料与器件学报》1996年第4期247-251,共5页Journal of Functional Materials and Devices

基　　金：院大型仪器功能开发项目

摘　　要：采用化学涂层和焙烧的方法制成了高性能通道式电子倍增器（ＣＥＭ）。测试结果表明工作电压在２５００Ｖ时增益可达１０￣８、暗计数为０ｃ／６０ｓ和脉冲分布为２０－５０％。把它们替代进口的俄歇电子能谱和扫描电子显微镜中的ＣＥＭ部件，能良好工作一年以上，本文给出了与其有关的ＡＥＳ图谱和ＳＥＭ照片。结果表明该通道式电子倍增器在性能、质量和价格方面均具有很大的竞争力。High performance channeltron electron multipliers have been made by chemical coating and calcining.High gain of 108,low dark count of 0c/60s and good pulse height distribution of 25-50%have been reached at working voltage of 2500V.Replacing the import one used in AES and SEM with them,the systems of AES and SEM have been working normally over one year. The relative AES spectra and SEM photographs are given in the text.It is proved that our CEMs are competitive in character,quality and price.

关 键 词：通道式 电子倍增器 增益 电子器件 

分 类 号：TN603[电子电信—电路与系统]