Schottky barrier MOSFET structure with silicide source/drain on buried metal  

作　　者：李定宇 孙雷 张盛东 王漪 刘晓彦 韩汝琦 

机构地区：[1]Institute of Microelectronics, Peking University, Beijing 100871. China

出　　处：《Chinese Physics B》2007年第1期240-244,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China （Grant No 60506009）.

摘　　要：In this paper, we propose a novel Schottky barrier MOSFET structure, in which the silicide source/drain is designed on the buried metal （SSDOM）. The source/drain region consists of two layers of silicide materials. Two Schottky barriers are formed between the silicide layers and the silicon channel. In the device design, the top barrier is lower and the bottom is higher. The lower top contact barrier is to provide higher on-state current, and the higher bottom contact barrier to reduce the off-state current. To achieve this, ErSi is proposed for the top silicide and CoSi2 for the bottom in the n-channel ease. The 50 nm n-channel SSDOM is thus simulated to analyse the performance of the SSDOM device. In the simulations, the top contact barrier is 0.2e V （for ErSi） and the bottom barrier is 0.6 eV （for CoSi2）. Compared with the corresponding conventional Schottky barrier MOSFET structures （CSB）, the high on-state current of the SSDOM is maintained, and the off-state current is efficiently reduced. Thus, the high drive ability （1.2 mA/μm at Vds = 1 V, Vgs = 2 V） and the high Ion/Imin ratio （10^6） are both achieved by applying the SSDOM structure.In this paper, we propose a novel Schottky barrier MOSFET structure, in which the silicide source/drain is designed on the buried metal （SSDOM）. The source/drain region consists of two layers of silicide materials. Two Schottky barriers are formed between the silicide layers and the silicon channel. In the device design, the top barrier is lower and the bottom is higher. The lower top contact barrier is to provide higher on-state current, and the higher bottom contact barrier to reduce the off-state current. To achieve this, ErSi is proposed for the top silicide and CoSi2 for the bottom in the n-channel ease. The 50 nm n-channel SSDOM is thus simulated to analyse the performance of the SSDOM device. In the simulations, the top contact barrier is 0.2e V （for ErSi） and the bottom barrier is 0.6 eV （for CoSi2）. Compared with the corresponding conventional Schottky barrier MOSFET structures （CSB）, the high on-state current of the SSDOM is maintained, and the off-state current is efficiently reduced. Thus, the high drive ability （1.2 mA/μm at Vds = 1 V, Vgs = 2 V） and the high Ion/Imin ratio （10^6） are both achieved by applying the SSDOM structure.

关 键 词：Schottky barrier MOSFET Schottky barrier barrier height silicide source/drain 

分 类 号：TN383[电子电信—物理电子学]