MOCVI法制备SiO_2/SiO_2复合材料  

Processing of SiO_2/SiO_2 Composite by MOCVI Method

作　　者：郑勇[1] 张立同[1] 陈照峰[1] 成来飞[1] 徐永东[1] 

机构地区：[1]西北工业大学超高温结构复合材料国防科技重点实验室

出　　处：《航空制造技术》2007年第1期92-95,99,共5页Aeronautical Manufacturing Technology

摘　　要：依据金属基化学气相渗透法(MetalOr-ganicChemicalVaporInfiltration,MOCVI)工艺理论基础,采用MOCVI法制备出SiO2/SiO2复合材料,并分析了载气流量、先驱体JH20温度和沉积温度对氧化硅基体渗透速率和SiO2/SiO2(石英玻璃)复合材料显微结构的影响。结果表明,优化条件为:JH20的温度为60℃,载气流量为500mL/min,氧气流量为15mL/min,沉积温度为600℃。According to the processing theory basis of metal organic chemical vapour infiltration （MOCVI）, SiO2/SiO2 composite is processed. The effects of gas flow, temperature of precursor JH20 and deposition temperature on the infiltration rate of SiO2 matrix and microstructure of SiO2/SiO2 composite are analyzed. The results show that the optimal conditions are that the temperature of JH20 is 60℃, gas flow rate is 500mL/min, flow rate of O2 is 15mL/min and deposition temperature is 600℃.

关 键 词：复合材料 石英玻璃 MOCVI 制备条件 

分 类 号：TN304.05[电子电信—物理电子学]