IGCT的应用特性  

Application Specific IGCTs

作　　者：尤金霜[1] 译项[1] 颉校[1] 

机构地区：[1]北京金自天正智能控制股份有限公司

出　　处：《电力电子》2006年第6期21-24,17,共5页Power Electronics

摘　　要：最近几年里,由于IGCT具有较低的导通和开关损耗,它们已经成为中等电压电平用的电力半导体器件。两种损耗之间的折衷可以通过各种寿命控制技术调整。对这些器件日益增长的需求要求标准类型的元件来满足如静态电路断路器(低通态)、中压驱动(低开关损耗)这样的应用。另外,牵引(低工作温度)和电流型逆变器(对称阻断)方面的应用通常对半导体元件有相矛盾的要求。本文重点介绍用少量晶片和门极单元,同一系列的电力器件将如何满足这样的需求。解释了IGCT和IGBT之间的一些重要差异并讨论了器件发展的前景。IGCTs have established themselves as the power semiconductor of choice at medium voltage levels within the last few years because of their low conduction and switching losses. The trade-off between these losses can be adjusted by various lifetime control techniques and the growing demand for these devices is driving the need for standard types to cover such applications as Static Circuit Breakers （low on -state） and Medium Voltage Drives （low switching losses）. The additional demands of Traction （low operating temperatures） and Current Source Inverters （symmetric blocking） would normally result in conflicting demands on the semiconductor. This paper will outline how a range of power devices can meet these needs with a limited number of wafers and gate units. Some of the key differences between IGCTs and IGBTs will be explained and the outl.ook for device improvements will be discussed.

关 键 词：IGCT 应用 电力半导体器件 低开关损耗 半导体元件 特性 电流型逆变器 电路断路器 

分 类 号：TN34[电子电信—物理电子学]