直流磁控溅射Ni_(49.54)Mn_(29.59)Ga_(20.87)磁驱动记忆合金薄膜的XPS研究  

XPS study of Ni_(49.54)Mn_(29.59)Ga_(20.87) magnetically driven shape memory alloy thin film fabricated by D.C magnetron sputtering technique

作　　者：高来勖[1] 刘超[2] 高智勇[2] 安旭[1] 蔡伟[2] 赵连城[2] 

机构地区：[1]黑龙江大学电子工程黑龙江省高校重点实验室,黑龙江哈尔滨150080 [2]哈尔滨工业大学材料科学与工程学院,黑龙江哈尔滨150001

出　　处：《功能材料》2007年第1期50-52,共3页Journal of Functional Materials

摘　　要：采用直流磁控溅射技术沉积了Ni49.54Mn29.59Ga20.87磁驱动形状记忆合金薄膜。XRD结果表明,Ni49.54Mn29.59Ga20.87薄膜室温下为5层调制型结构马氏体。X射线光电子能谱(XPS)分析表明,放置于空气中2个月的沉积态薄膜表面吸附少量氧和碳杂质。随Ar+刻蚀深度的增加,表面C杂质易被剥蚀掉,而部分氧杂质以MnO状态存在;Ni、Mn、Ga元素含量由薄膜表面向内层逐渐增加,化学价由正价向零价转变。Ni49.54 Mn29.59 Ga20.87 magnetically driven shape memory alloy thm film taas been deposited on silicon substrates by means of D. C magnetron sputtering technique. XRD pattern shows that the thin film is five-layered martensite phase at room temperature. The surface characteristics of the thin film are also investigated by X-ray electron spectroscopy （XPS）. The results show that the film surface absorbs lots of O and C when it was put into air for 2months. With the increasing of Ar^＋ sputtering depth, the contaminations of C element can be removed,but contaminations of O formed MnO exist in the film. The contents of Ni,Mn and Ga are increasing from the surface to inside,along with the transition from the ionic bonded atom to metal atom.

关 键 词：NI-MN-GA 磁驱动形状记忆合金 薄膜 溅射 

分 类 号：TG111.92[金属学及工艺—物理冶金]