BSCCO超导体中均匀排布ZnO缺陷的纳米复合制备  

Introduce uniformly distributed ZnO nano-defects into BSCCO superconductors by nano-composite method

作　　者：姜万涛[1] 许战立[1] 陈政[1] 赵晓鹏[1] 

机构地区：[1]西北工业大学电流变技术研究所,陕西西安710072

出　　处：《功能材料》2007年第1期157-160,共4页Journal of Functional Materials

基　　金：国家杰出青年科学基金资助项目(50025207);国家自然科学基金资助项目(50272054)

摘　　要：通过纳米复合掺杂的方法,在BSCCO超导体中引入了均匀排布的纳米ZnO缺陷。研究并比较了不同掺杂方法对超导体性能以及ZnO在超导体中分布状态的影响。测试结果表明,不同掺杂方法所制备的样品均有明显的超导现象;经HRSEM表征,纳米复合掺杂所得样品中ZnO缺陷呈线状均匀排布,粒径约为100nm。Uniformly distributed ZnO nano-defects were introdueed into the BSCCO supereonduetors, using nano-eomposite method. The performanee of supereonduetors and distribution of ZnO in supereonduetors aeeording to different doping methods were researched. The results of standard four-probes method indicated that all those samples fabricated by different doping methods had obvious performance belonging to HTS. From the HRSEM images, we could see nano-ZnO（about 100nm） defects linearly distributed on the surface of samples fabrieated by nano-eomposite doping method.

关 键 词：超导 纳米复合 掺杂 BSCCO ZNO 

分 类 号：TM26[一般工业技术—材料科学与工程]