Annealing behaviors of vacancy in varied neutron irradiated Czochralski silicon  

作　　者：陈贵锋 李养贤 刘丽丽 牛萍娟 牛胜利 陈东风 

机构地区：[1]China Institute of Atomic Energy,Beijing 102413,China [2]School of Materials Science and Engineering,Hebei University of Technology,Tianjin 300130,China [3]School of Information and Communication,Tianjin Polytechnic University,Tianjin 300160,China

出　　处：《中国有色金属学会会刊：英文版》2006年第B01期113-115,共3页Transactions of Nonferrous Metals Society of China

基　　金：Project(50472034) supported by the National Natural Science Foundation of China; Project(E2005000048) supported by the Natural Science Foundation of Hebei Province, China; Project(20050080006) supported by the Specialized Research Fund for the Doctoral Program of Higher Education, China.

摘　　要：The difference of annealing behaviors of vacancy-oxygen complex (VO) in varied dose neutron irradiated Czochralski silicon: (S1 5×1017 n/cm3 and S2 1.07×1019 n/cm3) were studied. The results show that the VO is one of the main defects formed in neutron irradiated Czochralski silicon (CZ-Si). In this defect, oxygen atom shares a vacancy, it is bonded to two silicon neighbors. Annealed at 200 ℃, divacancies are trapped by interstitial oxygen(Oi) to form V2O (840 cm-1). With the decrease of the 829 cm-1 (VO) three infrared absorption bands at 825 cm-1 (V2O2), 834 cm-1 (V2O3) and 840 cm-1 (V2O) will rise after annealed at temperature range of 200-500 ℃. After annealed at 450-500 ℃ the main absorption bands in S1 sample are 834 cm-1, 825 cm-1 and 889 cm-1 (VO2), in S2 is 825 cm-1. Annealing of A-center in varied neutron irradiated CZ-Si is suggested to consist of two processes. The first is due to trapping of VO by Oi in low dose neutron irradiated CZ-Si (S1) and the second is due to capture the wandering vacancy by VO, etc, in high dose neutron irradiated CZ-Si (S2), the VO2 plays an important role in the annealing of A-center. With the increase of the irradiation dose, the annealing behavior of A-center is changed.The difference of annealing behaviors of vacancy-oxygen complex （VO） in varied dose neutron irradiated Czochralski silicon： （S1 5×10^17n/cm^3 and S2 1.07×10^19n/cm^3） were studied. The results show that the VO is one of the main defects formed in neutron irradiated Czochralski silicon （CZ-Si）. In this defect, oxygen atom shares a vacancy, it is bonded to two silicon neighbors. Annealed at 200℃, divacancies are trapped by interstitial oxygen（Oi） to form V20 （840 cm^-1）. With the decrease of the 829 cm^-1 （VO） three infrared absorption bands at 825 cm-l （V202）, 834 cm^-1 （V203） and 840 cm^-1 （V20） will rise after annealed at temperature range of 200-500 ℃. After annealed at 450-500 ℃ the main absorption bands in S1 sample are 834 cm ^-1, 825 cm^-1 and 889 cm ^-1 （VO2）, in S2 is 825 cm ^-1. Annealing of A-center in varied neutron irradiated CZ-Si is suggested to consist of two processes. The first is due to trapping of VO by Oi in low dose neutron irradiated CZ-Si （S 1） and the second is due to capture the wandering vacancy by VO, etc, in high dose neutron irradiated CZ-Si （S2）, the VO2 plays an important role in the annealing of A-center. With the increase of the irradiation dose, the annealing behavior of A-center is changed.

关 键 词：快中子辐照直拉硅 A心 FTIR 退火行为 空穴 

分 类 号：TN304[电子电信—物理电子学]