Structure and magnetic properties of amorphous and polycrystalline Fe_3O_4 thin films  

Structure and magnetic properties of amorphous and polycrystalline Fe_3O_4 thin films

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作  者:唐晓莉 张怀武 苏桦 钟智勇 荆玉兰 

机构地区:[1]School of Micro-electronics and Solid-state Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China

出  处:《中国有色金属学会会刊:英文版》2006年第B01期249-252,共4页Transactions of Nonferrous Metals Society of China

基  金:Project (90306015) supported by the National Natural Science Foundation of China, and the Youths’ Teacher Supporting Project of University of Electronic Science and Technology of China (UESTC).

摘  要:Half-metallic Fe3O4 films prepared by DC magnetron reactive sputtering with a tantalum(Ta) buffer layer was investigated. Primary emphasis is placed on the structural impact on its magnetic properties. The experimental results show that the amorphous Fe3O4 films exhibit a superparamagnetic response at a large-scale from 20 nm to 150 nm, and the magnetoresistance (MR) isn’t detected. By contrast, the polycrystalline Fe3O4 films possess large saturation magnetization Ms of 420 A/(kg·cm) and a clear magnetoresistance with a field of 40 kA/m. The unusual properties for the amorphous Fe3O4 film are attributed to the existing large density of the similar structure as anti-phase boundaries in the film.Half-metallic Fe3O4 films prepared by-DC magnetron reactive sputtering with a tantalum(Ta) buffer layer was investigated. Primary emphasis is placed on the structural impact on its magnetic properties. The experimental results show that the amorphous Fe3O4 films exhibit a superparamagnetic response at a large-scale from 20 nm to 150 nm, and the magnetoresistance (MR) isn't detected. By contrast, the polycrystalline Fe3O4 films possess large saturation magnetization Ms of 420 A/(kg.cm) and a clear magnetoresistance with a field of 40 kA/m. The unusual properties for the amorphous Fe3O4 film are attributed to the existing large density of the similar structure as anti-phase boundaries in the film.

关 键 词:四氧化三铁 非晶态薄膜 多晶薄膜 结构 磁阻性质 

分 类 号:TB383.2[一般工业技术—材料科学与工程]

 

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