Photoluminescence properties of ZnSe/SiO_2 composite thin films prepared by sol-gel method  

作　　者：姜海青 车俊 姚熹 

机构地区：[1]School of Technical Physics,Xidian University,Xi’an 710071,China [2]Electronic Material Research Laboratory,Key Laboratory of Education Ministry,Xi’an Jiaotong University,Xi’an 710049,China

出　　处：《中国有色金属学会会刊：英文版》2006年第B01期266-269,共4页Transactions of Nonferrous Metals Society of China

基　　金：Project (2002CB613305) supported by the National Basic Research Program; project supported by the International Cooperation Research Project of Chinese-Israel of Ministry Education of China

摘　　要：ZnSe/SiO2 composite thin films was prepared by sol-gel method. XRD results indicate the phase structure of ZnSe particles embedded in ZnSe/SiO2 composite thin films is sphalerite (cubic ZnS). Spectroscopic ellipsometers were used to investigated the dependences of ellipsometric angle with wavelength of ZnSe/SiO2 composite thin films. The optical constant, thickness, porosity and the concentration of ZnSe of ZnSe/SiO2 thin composite films were fitted according to Maxwell-Garnett effective medium theory. The thickness of ZnSe/SiO2 composite thin thin films was also measured through surface profile. The photoluminescence properties of ZnSe/SiO2 thin composite thin films was investigated through fluorescence spectrometer. The photoluminescence results show that the emission peak at 487 nm (2.5 eV) is excited at 395 nm corresponds to the band-to-band emission of sphalerite ZnSe crystal(2.58 eV). The strength free exciton emission and other emission peaks correlating to ZnSe lattice defect were also observed.ZnSe/SiO2 composite thin films was prepared by sol-gel method. XRD results indicate the phase structure of ZnSe particles embedded in ZnSe/SiO2 composite thin films is sphalerite （cubic ZnS）. Spectroscopic ellipsometers were used to investigated the dependences of ellipsometric angle with wavelength of ZnSe/SiO2 composite thin films. The optical constant, thickness, porosity and the concentration of ZnSe of ZnSe/SiO2 thin composite films were fitted according to Maxwell-Garnett effective medium theory. The thickness of ZnSe/SiO2 composite thin thin films was also measured through surface profile. The photoluminescence properties of ZnSe/SiO2 thin composite thin films was investigated through fluorescence spectrometer. The photoluminescence results show that the emission peak at 487 nm （2.5 eV） is excited at 395 nm corresponds to the band-to-band emission of sphalerite ZnSe crystal（2.58 eV）. The strength free exciton emission and other emission peaks correlating to ZnSe lattice defect were also observed.

关 键 词：ZnSe/SiO2复合材料薄膜 溶胶-凝胶法 制备 光致发光性质 

分 类 号：TB333[一般工业技术—材料科学与工程]