Effect of working pressure and temperature on ZnO film deposited on free-standing diamond substrates  

作　　者：赵平 夏义本 王林军 刘健敏 徐闰 彭鸿雁 史伟民 

机构地区：[1]School of Materials Science and Engineering,Shanghai University,Shanghai 200072,China [2]Department of Physics,Mudanjiang Normal College,Mudanjiang 157012,China

出　　处：《中国有色金属学会会刊：英文版》2006年第B01期302-305,共4页Transactions of Nonferrous Metals Society of China

基　　金：Project (60577040) supported by the National Natural Science Foundation of China; Project (0404) supported by the Shanghai Foundation of Applied Materials Research and Development; Projects(0452nm051, 05nm05046) supported by the Nano-technology Project of Shanghai; Project (T0101) supported by the Shanghai Leading Academic Disciplines

摘　　要：The structure characteristic and electric performance of ZnO film deposited on nucleation side of free-standing diamond substrates under different heating temperatures (Th) of substrate and working pressures (p) were studied. The structure of the ZnO films tested by X-ray diffraction shows that ZnO film of high c-axis orientation is deposited on the nucleation side of free-standing diamond substrate which is extremely smooth when Th=250 ℃ and p=0.4 Pa. After annealing at 480 ℃ in N2 atmosphere, the SEM and the AFM analyses demonstrate that the c-axis orientation of ZnO film is obviously enhanced. The resistivity of ZnO films also increases up to 8×105 ■·cm which is observed by I?V test.The structure characteristic and electric performance of ZnO film deposited on nucleation side of free-standing diamond substrates under different heating temperatures （Tb） of substrate and working pressures （p） were studied. The structure of the ZnO films tested by X-ray diffraction shows that ZnO film of high c-axis orientation is deposited on the nucleation side of free-standing diamond substrate which is extremely smooth when Th=250 ℃ and p=0.4 Pa. After annealing at 480 ℃in N2 atmosphere, the SEM and the AFM analyses demonstrate that the c-axis orientation of ZnO film is obviously enhanced. The resistivity of ZnO films also increases up to 8×10^5Ωcm which is observed by I- V test.

关 键 词：氧化锌薄膜 沉积 加工压力 加工温度 自立金刚石衬底 声表面波器件 

分 类 号：TB383.2[一般工业技术—材料科学与工程]