Performance improvement of ZnO film by room-temperature oxygen plasma pretreatment  

作　　者：赵平 夏义本 王林军 刘健敏 徐闰 彭鸿雁 史伟民 

机构地区：[1]School of Materials Science & Engineering,Shanghai University,Shanghai 200072,China [2]Physics Department,Mudanjiang Normal College,Mudanjiang 157012,China

出　　处：《中国有色金属学会会刊：英文版》2006年第B01期310-312,共3页Transactions of Nonferrous Metals Society of China

基　　金：Project(60577040) supported by the National Natural Science Foundation of China; Project(0404) supported by Shanghai Foundation of Applied Materials Research and Development; Projects(0452nm051, 05nm05046) supported by the Nano-technology Project of Shanghai; Project(T0101) supported by Shanghai Leading Academic Disciplines

摘　　要：The room-temperature oxygen plasma treatment before depositing ZnO films on nanocrystalline diamond substrates was studied. The nanocrystalline diamond substrates were pretreated in oxygen plasma at 50 W for 30 min at room temperature and then ZnO films were sputtered on diamond substrates at 400 W. The X-ray diffraction (XRD) patterns show that the c-axis orientation of ZnO film increases evidently after oxygen plasma pretreatment. The AFM and SEM measurements also show that the high c-axis orientation of ZnO film and the average surface roughness is less than 5 nm. The resistivity of ZnO films increases nearly two orders of magnitude to 1.04×108■·cm. As a result, room-temperature oxygen plasma pretreatment is indeed a simple and effective way to improve the performance of ZnO film used in SAW devices by ameliorating the combination between diamond film and ZnO film and also complementing the absence of oxygen atoms in ZnO film.The room-temperature oxygen plasma treatment before depositing ZnO films on nanocrystalline diamond substrates was studied. The nanocrystalline diamond substrates were pretreated in oxygen plasma at 50 W for 30 min at room temperature and then ZnO films were sputtered on diamond substrates at 400 W. The X-ray diffraction （XRD） patterns show that the c-axis orientation of ZnO film increases evidently after oxygen plasma pretreatment. The AFM and SEM measurements also show that the high c-axis orientation of ZnO film and the average surface roughness is less than 5 nm. The resistivity of ZnO films increases nearly two orders of magnitude to 1.04 - 10^8 Ω.cm. As a result, room-temperature oxygen plasma pretreatment is indeed a simple and effective way to improve the performance of ZnO film used in SAW devices by ameliorating the combination between diamond film and ZnO film and also complementing the absence of oxygen atoms in ZnO film.

关 键 词：氧化锌薄膜 室温 氧等离子体预处理 性能改进 纳米晶金刚石膜 声表面波器件 

分 类 号：TB383.2[一般工业技术—材料科学与工程]