Modeling of Amperometric Immunosensor for CMOS Integration  

作　　者：Ce Li Haigang Yang Shanhong Xia Chao Bian 

机构地区：[1]The State Key Lab of Transducer Technology, Institute of Electronics, CAS, Beijing 100080, China [2]Graduate University of Chinese Academy of Sciences, Beijing 100039, China

出　　处：《稀有金属材料与工程》2006年第A03期439-442,共4页Rare Metal Materials and Engineering

基　　金：supported by National Natural Science Foundation of China,No.90307014

摘　　要：A circuit model of the Amperometric immunosensor for use in the biosensor system-on-chip simulation is proposed in this paper.The model parameters are extracted with several methods and verified by MATLAB and SPICE simulation.A CMOS potentiostat circuit required for conditioning the Amperometric immunosensor is also included in the circuit model.The mean square error norm of the simulated curve against the measured one is 8.65×10^(-17) The whole circuit has been fabricated in a 0.35μm CMOS process.A circuit model of the Amperometric immunosensor for use in the biosensor system-on-chip simulation is proposed in this paper. The model parameters are extracted with several methods and verified by MATLAB and SPICE simulation. A CMOS potentiostat circuit required for conditioning the Amperometric immunosensor is also included in the circuit model. The mean square error norm of the simulated curve against the measured one is 8,65 × 10^-17. The whole circuit has been fabricated in a 0.35μm CMOS process.

关 键 词：AMPEROMETRIC MICROELECTRODE circuit model POTENTIOSTAT FOLDED-CASCODE 

分 类 号：TG[金属学及工艺]