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作 者:Jinbao Wei Haigang Yang Hongguang Sun Zengjin Lin Shanhong Xia
机构地区:[1]The State Key Lab of Transducer Technology, Institute of Electronies, CAS, P.O. Box 2652, Beijing 100080, China [2]Graduate University of the Chinese Academy of Sciences, Beijing 100039, China
出 处:《稀有金属材料与工程》2006年第A03期443-446,共4页Rare Metal Materials and Engineering
基 金:supported by National Natural Science Foundation of China(No.90307014)
摘 要:One of today's challenges is the integration of ISFETs in chemical and biochemical Microsystems.This article presents a full integration of ISFET chip containing the ISFET/REFET(reference FET) pair,ISFET/REFET amplifiers,bias current generator,as well as a reference electrode structure,all integrated on the same chip based on CMOS technology.The sensor chip was fabricated in a standard 0.35μm CMOS process(Chartered Semiconductor,Singapore).The extra post processing steps have been developed and added for depositing membranes.Finally,the pH response of the integrated sensor was measured with the interface circuit.One of today's challenges is the integration of ISFETs in chemical and biochemical Microsystems. This article presents a full integration of ISFET chip containing the ISFET/REFET (reference FET) pair, ISFET/REFET amplifiers, bias current generator, as well as a reference electrode structure, all integrated on the same chip based on CMOS technology. The sensor chip was fabricated in a standard 0.35 μm CMOS process (Chartered Semiconductor, Singapore). The extra post processing steps have been developed and added for depositing membranes. Finally, the pH response of the integrated sensor was measured with the interface circuit.
关 键 词:ISFET interface circuit integration and post processing
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