铜铟硫薄膜的固态硫化法制备及其性能研究  

Growth and Properties of CuInS_2 Films by Solid-State Sulfurization

作　　者：查杉[1] 元金石[1] 张弓[1] 庄大明[1] 

机构地区：[1]清华大学机械工程系,北京100084

出　　处：《真空科学与技术学报》2007年第1期63-66,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家863基础研究基金(No.2004AA513023)

摘　　要：采用中频交流磁控溅射方法沉积Cu-In预制膜,并采用固态源蒸发硫化方法制备CuInS2薄膜。考察了硫源温度对CuInS2薄膜性能的影响。采用扫描电镜(SEM)和X射线能量色散谱仪(EDS)分别观察了薄膜的表面形貌和分析了薄膜的成分,采用X射线衍射(XRD)表征了薄膜的组织结构。结果表明,在硫源温度处于280℃到360℃范围之内时,制备的CuInS2薄膜都具有单一的黄铜矿型结构,颗粒均匀,晶粒大小约为1μm。CuInS2 films were grown by middle frequency AC magnetron sputtering and by sulfurization in sulfur-sublimed atmosphere. Morphologies and compositions of the films were characterized with X-ray diffraction（XRD）, X-ray energy dispersive spectroscopy（EDS） and scanning electron microscopy（SEM）. The influence of S source temperature on the film properties was studied. The results show that at S source temperature ranging from 280℃ to 360℃, the CuInS2 films synthesized has a single chalcopyrite phase with fairly large grain size of about 1μm.

关 键 词：太阳能电池 CuInS2薄膜 固态源蒸发硫化 硫源温度 

分 类 号：TM615[电气工程—电力系统及自动化]