1.5μm外腔半导体激光器及其光混频实验研究  

1.5μm External-Cavity Semiconductor Lasers and the Beating Experiments

作　　者：惠荣庆[1] 张建平[1] 管克俭[1] 吴彝尊 陶尚平[1] 

机构地区：[1]北京邮电学院

出　　处：《电子学报》1990年第3期107-110,共4页Acta Electronica Sinica

摘　　要：在1.5μm波段自聚焦透镜外腔半导体激光器的特性及其光混频实验中,两只结构相同的外腔半导体激光器经拍频后得到了稳定的中频信号,线宽约为6MHz(平均线宽为3MHz),在不加任何外部稳频措施的情况下,连续观察两小时中心频漂小于100MHz。文中还测得外腔半导体激光器线宽—功率特性及调频响应特性,实验与理论相吻合。且表明,这种结构的激光器可满足FSK相干光纤通信系统的要求。In this paper, 1.5μm GRINROD external-cavity semiconductor lasers and the beat experiments are reported. A stable intermediate frequency with 6MHz linewidth is obtained by the beating of the two identical external-cavity semiconductor lasers. The drifting of the intermediate frequency is less than 100MHz in 2 hours continuous observation without any external active frequency stabilization. The results show that this kind of external cavity semiconductor laser is practical in FSK coherent optical communication systems. The linewidth-power characteristics and the frequency modulation responsibilities are also studied in this paper using the beating method. The experimental results are in agreement with the previously published theories.

关 键 词：半导体激光器 光混频 外腔 

分 类 号：TN248.4[电子电信—物理电子学]