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机构地区:[1]西安交通大学电子材料与器件研究所,西安710049
出 处:《西安交通大学学报》2007年第2期228-231,244,共5页Journal of Xi'an Jiaotong University
基 金:国家重点基础研究发展规划资助项目(2002CB613307);国家自然科学基金资助项目(10474077)
摘 要:采用固态烧结工艺制备了位于反铁电(AFE)/铁电(FE)相界附近的PbLa(Zr,Sn,Ti)O3(PLZST)反铁电陶瓷样品.通过测定样品的相对介电常数及损耗与各种参量的关系,得到了等静压力及偏置电压对反铁电体铁电/反铁电相变及反铁电/顺电(PE)相变温度影响的规律.研究发现:极化了的PLZST反铁电材料在一定等静压力的作用下,随着偏置电压的增加其峰值相对介电常数增大,相对介电常数最大值对应的温度降低,FE/AFE转变温度上升,AFE/PE转变温度下降;当等静压力为0.1 MPa时,单位偏置电压引起的居里点变化率为-1℃/kV,单位偏置电压引起的FE/AFE相变温度变化率为5.2℃/kV,当等静压力为60 MPa时,分别为-2.2℃/kV和3℃/kV.Antiferroelectric PbLa(Zr,Sn, Ti)O3 (PLZST) ceramics sample near the ferroelectric (FE)-antiferroelectric(AFE) phase boundary are prepared by a traditional solid-state reaction process. The influences of the bias voltage and hydrostatic pressure on FE/AFE and AFE/PE phase transition and transition temperature of these PLZST ceramics obtained by measuring the relation between the relative dielectric constants and loss and various parameters of samples. It is found that under certain hydrostatic pressure, the dielectric constants of polarized antiferroelectric PLZST increase, and the temperature corresponding to the maximum of relative dielectric constants decreases with increasing bias voltage. At the same time, the FE/AFE transition temperature increases and AFE/PE transition temperature decreases. Under the hydrostatic pressure of 0. 1 MPa, the change rate of Curie temperature caused by unit bias voltage of this ceramics is -1 ℃/kV and the change rate of FE/AFE transition temperature caused by unit bias voltage is 5.2 ℃/kV; under the pressure of 60 MPa, are -2.2 ℃/kV and 3 ℃/kV respectively.
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