纳米AlN粉末的制备与烧结  

Preparation and Sintering of Nanometer AlN Powders

作　　者：杜学丽[1] 秦明礼[1] 孙伟[1] 曲选辉[1] 

机构地区：[1]北京科技大学材料科学与工程学院

出　　处：《真空电子技术》2006年第4期20-22,共3页Vacuum Electronics

基　　金：北京市先进粉末冶金材料与技术重点实验室开放课题基金(20050427690)

摘　　要：利用低温燃烧合成前驱物制备出平均粒度为100nm的AIN陶瓷粉末，比较了该粉末的常压烧结和放电等离子烧结的特性。实验表明：以合成的AIN粉末为原料，添加5％（质量比）Y2O3作为烧结助剂，在常压、流动N2气氛下1600℃保温3h。制备出平均晶粒尺寸为4-8μm、密度为3．28g·cm^-3的AIN陶瓷；将同样的粉末不加任何烧结助剂，采用SPS技术在1600℃保温4min，得到密度为3．26g·cm^-3的AIN陶瓷，晶粒度约为1～2μm。The nanometer AIN powders with mean particle size 100 nm were synthesized from low-temperature combustion synthesis （LCS） precursor. The synthesized powders were sintered by pressureless sintering technique in a graphite furnace with a flowing nitrogen atmosphere and by spark plasma sintering （SPS） technique respectively. The results show that the nanometer AIN powders synthesized from LCS have excellent sintering activity. AIN ceramic with density 3.28 g/cm^3 and grain size 4-8 μm was produced when the powder doped with 5 96 Y203 as sintering aids sintered at 1600℃ for 3 hours in flow nitrogen gas at atmospheric pressure. In another way, the powder with no sintering aids sintered by SPS at 1600 ℃ for 4 minutes under 40 MPa fabricated AIN ceramic with density 3.26 g/cm^3 and mean grain size 1- 2μm.

关 键 词：纳米粉末 AIN陶瓷 放电等离子烧结 

分 类 号：TQ174[化学工程—陶瓷工业]