多晶薄膜表面粗化与生长方式转变  

Surface roughening and growth mode transition of polycrystalline thin films

作　　者：杨吉军[1] 徐可为[1] 

机构地区：[1]西安交通大学金属材料强度国家重点实验室,西安710049

出　　处：《物理学报》2007年第2期1110-1115,共6页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(973)项目(批准号:2004CB619302);国家自然科学基金(批准号:50471035)资助的课题~~

摘　　要：采用原子力显微镜研究了磁控溅射多晶薄膜表面粗化行为对归一化沉积温度Ts/Tm(Ts是沉积温度,Tm是材料熔点)的依赖性与薄膜生长方式转变行为.随着Ts/Tm增加,薄膜表面粗糙度增加,而表征粗糙度随时间演化特征的生长指数β历经了先减小再增加的过程.β对Ts/Tm的依赖关系反映了薄膜生长方式的转变行为,即薄膜生长依次由随机生长方式向表面扩散驱动生长方式与异常标度行为生长方式转变.在低于体扩散控制薄膜生长的温度时,晶界扩散机理导致多晶薄膜的表面粗化的异常标度行为.Surface roughening of Cu and Ta polycrystalline thin films deposited by magnetron sputtering at different homologous temperature Ts/Tm（ Ts and Tm are the substrate temperature and the material melting point, respectively） have been studied using atomic force microscopy. With increasing Ts/Tm, the surface roughness of the films increased and growth exponent first increased and then decreased. The observed temperature dependence of growth exponent indicates a transition of growth modes from random growth at lower Ts/Tm through surface diffusion-dominated growth at intermediate Ts /Tm, to anomalous scaling growth at higher Ts/Tm. We also found that the surface roughening of the films reflects the anomalous scaling behavior when the value of Ts/Tm is lower than 0.41, which implies that the boundary diffusion mechanism plays an important role in the scaling behavior of surface roughening.

关 键 词：多晶薄膜 表面粗化 温度 生长 

分 类 号：O484.1[理学—固体物理]