Co掺杂对ZnO薄膜结构和性能的影响  

Influence of Co doping on ZnO film

作　　者：杨景景[1] 方庆清[1] 王保明[1] 王翠平[1] 周军[1] 李雁[1] 刘艳美[1] 吕庆荣[1] 

机构地区：[1]安徽大学物理与材料科学学院

出　　处：《物理学报》2007年第2期1116-1120,共5页Acta Physica Sinica

基　　金：安徽省教育厅青年教师项目(批准号:05010210)资助的课题~~

摘　　要：采用PVA溶胶-凝胶方法,在玻璃衬底上制备了Zn1-xCoxO薄膜,利用X射线衍射仪(XRD)研究了不同Co含量对其微结构的影响.采用振动样品磁强计(VSM)测量了Zn0.88Co0.12O样品室温下的磁性.采用荧光光谱仪研究了Zn1-xCoxO样品室温下的发光特性,分析掺杂含量对其发光性能的影响,发现随着掺杂含量的增加,蓝光发光峰有一定的红移现象.The Co^2 ＋ ions doped ZnO diluted magnetic semiconductor films, Zn1-x Co, O, were prepared on glass substrate using PVA method. The structure of Zn1-x Cox O thin films with different x value and its photoluminescence properties were investigated. The vibrating sample magnetometer （VSM） measures the ferromagnetic properties of Zn0.88 Co0.12O thin films at room temperature. We analyzed the influence of doping content on its luminescence performance, and discovered that with the doping content increasing, the blue luminescence peak shows a red shift.

关 键 词：PVA方法 ZNO 掺杂 

分 类 号：O484.4[理学—固体物理]