基于IGBT门驱动减小PWM逆变器死区影响的策略  

A Strategy to Eliminate the Dead-Time Effect of PWM Inverter Based on IGBT Gate Driver

作　　者：朱思国[1] 欧阳红林[1] 金永顺[1] 孙建明[1] 

机构地区：[1]湖南大学电气与信息工程学院,410082

出　　处：《电气应用》2007年第1期73-76,共4页Electrotechnical Application

摘　　要：提出了一种新颖的IGBT门驱动方法,对于PWM电压源型逆变器,其容易在IG-BT的门驱动器中实现。用这种方法,逆变器同一相的上、下IGBT可以接收理想的没有死区的PWM信号,并且不会引起直通问题。描述了所提出IGBT门驱动方法的原理,并且仿真结果证明了该方法的正确性。A novel IGBT gate method which is easily implemented within the IGBT gate driver for the PWM voltage source inverters is presented. Using this method, the gate drivers of the upper and the lower IGBT ＇ s within a inverter phase leg can receive the ideal （without dead-time） PWM signals, and will not cause the direct link shoot through problem. The principle of the proposed IGBT gate is describled, and the simulation results verifying the proposed method are presented.

关 键 词：电压源型逆变器 死区时间 PWM信号 

分 类 号：TM464[电气工程—电器]