纳米ZnO基掺杂气敏元件阵列的制备与特性  被引量:3

Preparation and properties of doped nanometer ZnO gas sensor array

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作  者:杨勇[1] 柏自奎[1] 张顺平[1] 蔡水洲[1] 曾大文[1] 谢长生[1] 

机构地区:[1]华中科技大学塑性成型模拟及模具技术国家重点实验室,湖北武汉430074

出  处:《电子元件与材料》2007年第2期46-48,51,共4页Electronic Components And Materials

摘  要:以金属蒸气氧化法制备的纯纳米ZnO为气敏原料,通过丝网印刷技术在Al2O3基片上制得纯ZnO和掺杂ZnO的气敏元件阵列。结果表明,元件阵列具有低的功耗,纯ZnO气敏元件阵列在350~400℃对橙汁、可乐、酒精和汽油有较高的敏感性,灵敏度分别为2.9,2.9,53.5和43.4。通过Bi2O3+Cu2O的掺杂,可以降低纯ZnO的电导,并进一步提高气敏元件在250~350℃温度区间对汽油的敏感性。并对其气敏机理进行了探讨。Pure ZnO nanoparticles were produced by metallic vapour oxidation method. Based on this raw material and it's dopant, gas sensor array was fabricated onto Al2O3 ceramic substrate through screen-printing technique. The results show that gas sensor array has low-power, the gas sensor array of pure ZnO exhibited higher sensitivity to orange juice, cola, alcohol and gasoline at 350-400 ℃, the resistance sensitivities are as follows: 2.9, 2.9, 53.5 and 43.4. The conductivity of pure ZnO could be decreased by doping of Bi203+Cu20. The sensitivity of the doping sample is higher than that of pure ZnO sample at 250-350℃, which indicate that gas sensor array has certain selectivity to gasoline. The gas sensitivity mechanism of doping was also discussed.

关 键 词:电子技术 气敏元件阵列 纳米ZNO 丝网印刷 电导 

分 类 号:TP212[自动化与计算机技术—检测技术与自动化装置] TP305[自动化与计算机技术—控制科学与工程]

 

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