Sn掺杂ZnO半导体纳米带的制备、结构和性能  

Synthesis, Structure and Properties of Sn-doped ZnO Nanobelts

作　　者：陈红升[1] 齐俊杰[1] 黄运华[1] 廖庆亮[1] 张跃[1] 

机构地区：[1]北京科技大学材料物理与化学系

出　　处：《物理化学学报》2007年第1期55-58,共4页Acta Physico-Chimica Sinica

基　　金：国家杰出青年基金(50325209);国家自然科学基金(50572005);国际合作与交流重大项目(50620120439);国家纳米科学中心资助

摘　　要：在无催化剂的条件下,利用碳热还原反应气相沉积法制备出了高产率单晶Sn掺杂ZnO纳米带.XRD和TEM研究表明纳米带为结晶完好的纤锌矿结构,生长方向沿[0001],EDS分析表明纳米带中Sn元素含量约为1.9%.室温光致发光谱(PL)显示掺锡氧化锌纳米带存在强的绿光发射峰和较弱的紫外发射峰,谱峰峰位中心分别位于494.8nm和398.4nm处,并对发光机制进行了分析.这种掺杂纳米带有望作为理想的结构单元应用于纳米尺度光电器件领域.Single crystalline Sn-doped ZnO nanobelts were successfully synthesized by the carbon thermal reduction deposition process without using any catalyst. XRD investigation confirmed that the products were the wurtzite structure of ZnO. SEM, EDS, and TEM analyses showed that the Sn-doped ZnO nanostructures contained a belt-like morphology with Sn doping content about 1.9%, and the growth direction of nanobelts was along the [0001] direction. A weak UV emission peak at around 398.4 nm and a strong green emission peak at around 494.8 nm were observed at room temperature. The luminescence mechanism of the Sn/ZnO nanobelts was also discussed. These nanobelts were promising building blocks for fabrication of nanoscale optoelectronic devices.

关 键 词：Sn掺杂 纳米带 ZNO 光致发光 生长机理 

分 类 号：TN304[电子电信—物理电子学]