磁控溅射法制备BST铁电薄膜的实验研究  

Study on(Ba_(0.65)Sr_(0.35))TiO_3 Ferroelectric Thin Film Prepared by RF Magnetron Sputtering

作　　者：章天金[1] 何军[1] 张柏顺[1] 潘瑞琨[1] 江娟[1] 马志军[1] 

机构地区：[1]湖北大学物理学与电子技术学院,湖北武汉430062

出　　处：《压电与声光》2007年第1期62-64,67,共4页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(50372017/E0204)

摘　　要：采用射频磁控溅射法在Si和Pt/TiOx/SiO2/Si衬底上沉积了(Ba0.65Sr0.35)TiO3铁电薄膜,研究了BST铁电薄膜微观结构和介电性能。实验结果表明:衬底温度在550℃,工作气压为2.0 Pa的溅射条件下沉积的BST薄膜,经750℃退火处理30 min后,形成了完整的钙钛矿相;与Si衬底相比,在Pt衬底上制备的BST薄膜晶粒更均匀、表面平整无裂纹。在室温、频率为100 kHz条件下薄膜的介电常数ε=353.8,介电损耗tanδ=0.012 8。介电温谱结果表明制备的(Ba0.65Sr0.35)TiO3铁电薄膜居里温度在5.0℃左右。The （Ba0.65Sr0.35）TiO3 ferroelectric thin film deposited on Si and Pt/TiO2/SiO2/Si substrates by radio frequency magnetron sputtering had been investigated focusing on the microstructure and dielectric properties. The experiment results showed that the BST thin films deposited on substrates at 550℃ in an work ambient pressure of 2.0 Paformed perfect perovskite structure. The BST thin film deposited on Pt substrate was more evenly distribution and the surface was more smooth than that on Si substrate. The dielectric constant and dissipation factor for （Ba0.65Sr0.35）TiO3 thin film at room temperature and a frequency of 100 kHz were 353.8 and 0. 012 8, respectively. According to the permittivity-temperature curve, the Curie temperature of the BST ferroelectric thin film was about 5℃.

关 键 词：RF磁控溅射 (Ba0.65Sr0.35)TiO3薄膜 介电常数 居里温度 

分 类 号：TN61[电子电信—电路与系统]