稀土掺杂对钛酸钡陶瓷介电性能的影响规律  

The Influence of Rare Earth Dopants Upon Dielectric Properties of BaTiO_3 Ceramics

作　　者：唐斌[1] 张树人[1] 周晓华[1] 尧彬[1] 李波[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《压电与声光》2007年第1期65-67,共3页Piezoelectrics & Acoustooptics

摘　　要：在BaTiO3(BT)-Nb2O5-ZnO系统中引入硼硅酸盐助烧剂,加入不同稀土氧化物(Y,Nd,Gd,Ho,Yb,Er,Pr,Dy,La,Ce)对BT进行介电性能研究,以期获得中烧X7R陶瓷材料。研究发现,不同稀土氧化物对BT陶瓷电容量温度变化曲线低温峰(约40℃)和高温峰(约127℃)的影响可分为3类。其改性机理可用掺杂后晶粒壳与晶粒芯体积分数的变化来解释。对比上述三种典型的稀土掺杂后BT陶瓷的电镜扫描(SEM)照片得出,不同稀土掺杂BT的室温介电常数与掺杂后BT陶瓷的晶粒生长情况密切相关。Borosilicate sintering aid, different rare-earth oxides have been doped into BaTiO3 （BT）-Nb2O5-ZnO system in order to obtain the X7R materials sintered at intermediate temperature. The experiment results have revealed that, according to the effects on the low temperature peak （at about 40℃ ） and the high temperature peak （at about 127℃ ） of the variation rate curve of capacitance of BT ceramics, the doping rare earth oxides can be divided into three categories. The different doping effects of rare earth oxides on the temperature capacitance variation Of BT ceramics can be explained by the change of the volume fraction of grain core and grain shell in the core-shell structure. The SEM photos corresponding to three typical rare earth oxides doped BT ceramics prove that the dielectric constant has close relationship with the grain size of BT ceramics.

关 键 词：X7R 钛酸钡 稀土掺杂 介电性能 电容量温度变化率 介温特性 

分 类 号：TM534[电气工程—电器]