NiFe/Ag/NiFe纳米结自旋晶体管研究  

Investigation on NiFe/Ag/NiFe Nanometer Junction Spin Transistor

作　　者：刘保元[1] 荆玉兰[1] 文岐业[1] 张怀武[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,四川成都610054

出　　处：《压电与声光》2007年第1期74-76,共3页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金重大基金资助项目(90306015)

摘　　要：利用直流磁控溅射工艺和掩膜技术研制出新型NiFe/Ag/NiFe全金属自旋晶体管试样。该薄膜磁阻系数ΔR/R≥9%,全金属自旋晶体管试样集电极电流变化MC>587%(常温),且其性能随基极Ag层厚度减小而增强。全金属自旋晶体管具有电流放大、存贮及逻辑电路等功能,,有望替代现有的晶体管而应用于半导体大规模集成电路。The mechanism of metal spin nanometer node transistor has been investigated in this paper. New kinds of NiFe/Ag/NiFe/ thin film material of metal spin transistor also have been manufactured and analyzed. It＇s coefficient of magneto-resistance is AR/R≥9%, the coefficient of collector current amplify is Mc 〉587% （in room temperature）. The properties of spin transistor increase as the base thickness decreasing. Spin transistor is as the same common transistor, which can be used IC electronic circuit in the future.

关 键 词：自旋晶体管 薄膜 半导体 

分 类 号：TM27[一般工业技术—材料科学与工程] TN213[电气工程—电工理论与新技术]