金属氧化物半导体气敏特性研究（Ⅰ）实验研究（待续）  

THE STUDY OF GAS SENSING CHARATERISTIC OF METAL OXIDE SEMICONDUCTORS (I)EXPERIMENTAL RESEARCH

作　　者：刘文利[1] 李建明[1] 吕红浪[1] 裘南畹[1] 

机构地区：[1]山东工业大学数理系

出　　处：《山东工业大学学报》1996年第4期411-417,共7页

基　　金：山东省科委资助项目;省自然科学基金

摘　　要：研究了气敏电导次方定律的指数和灵敏度随薄膜样品膜厚的变化、随温度的变化；气敏电导响应时间和恢复时间随膜厚的变化、随温度的变化；气敏电导振荡现象和规律．The present paper presents our recent seven years' experiment researchwork on gas sening and electric characteristics of metal oxides gas sensing materials, suchas the relation of power law exponent and sensitivity to film thickness and temperature ofour thin samples, the response time and recovery time of gas sensing conductance changingwith film thickness and temperature, the activation energy of conductivity varying withfilm thickness,and the phenomenon and regularity of gas sensing conductance oscillations.

关 键 词：气敏器件 金属氧化物 半导体 气敏特性 

分 类 号：TN304.21[电子电信—物理电子学]