Preliminary study of non-isothermal phase change phenomena in vertical Bridgman crystal growth  

作　　者：LIU Jie LU WenQiang 

机构地区：[1]College of Physical Sciences, Graduate University of Chinese Academy of Sciences, Beijing 100049, China

出　　处：《Chinese Science Bulletin》2007年第5期701-710,共10页

基　　金：Supported by the National Natural Science Foundation of China (Grant No. 50336040)

摘　　要：Axisymmetric dual reciprocity boundary element method (DRBEM) with augmented items is extended to simulate the heat and mass transfer problems in the vertical Bridgman method (VBM) crystal growth of HgCdTe and CdZnTe. Axial solute concentration redistribution of three regions numerically reap-pears, and the influence of the pulling rate of the ampoule on it is further studied. Secondly, one di-mensional transient phase change phenomena is studied, and non-isothermal phase change phe-nomena is obtained from the initial transient region through the steady growth region to the final tran-sient region. Thirdly, the two-dimensional axisymmetric phase change interface position, interfacial shape and the temperature field of the melt and the crystal are numerically captured under the condi-tion to arrive at the steady state with zero pulling rate of the ampoule. Finally, the study of transient axisymmetric non-isothermal phase change phenomena is stressed and the results are compared with those in isothermal phase change. The influence of the pulling rate on non-isothermal phase change phenomena is revealed.Axisymmetrlc dual reciprocity boundary element method （DRBEM） with augmented items is extended to simulate the heat and mass transfer problems In the vertical Bridgman method （VBM） crystal growth of HgCdTe and CdZnTe. Axial solute concentration redistribution of three regions numerically reappears, and the influence of the pulling rate of the ampoule on It is further studied. Secondly, one dimensional transient phase change phenomena is studied, and non-isothermal phase change phenomena is obtained from the initial transient region through the steady growth region to the final translent region. Thirdly, the two-dimensional axisymmetric phase change interface position, interracial shape and the temperature field of the melt and the crystal are numerlcally captured under the condition to arrive at the steady state with zero pulling rate of the ampoule. Flnally, the study of transient axisymmetrlc non-isothermal phase change phenomena is stressed and the results are compared with those in isothermal phase change. The influence of the pulling rate on non-isothermal phase change phenomena is revealed.

关 键 词：法向布里奇曼法 晶体生长 非等温相变 HGCDTE CDZNTE 半导体材料 

分 类 号：TN304.26[电子电信—物理电子学] O781[理学—晶体学]