掺杂Y_2O_3对ZnO-Bi_2O_3系压敏电阻片性能的影响  

Impact of Y_2O_3 Doping on Performance of ZnO-Bi_2O_3 Based Varistor

作　　者：王玉平[1] 马军[1] 

机构地区：[1]西安电瓷研究所,陕西西安710077

出　　处：《电瓷避雷器》2007年第1期18-20,共3页Insulators and Surge Arresters

摘　　要：掺杂Y2O3可显著提高ZnO-Bi2O3系压敏电阻的电位梯度、能量吸收能力等电气性能,但会引起泄漏电流的增加。研究了不同烧成温度下,掺杂0～1.7%(摩尔分数)Y2O3对ZnO-Bi2O3压敏电阻片电气性能的影响。结果表明,在1140℃下,掺杂0.68%(摩尔分数)Y2O3,可获得具有300V/mm的电位梯度和370J/cm3能量吸收能力的高性能电阻片。此外,以FSM为主成分的“F”无机高阻层适宜于高梯度压敏电阻片的侧面绝缘,加速老化系数KCT小于1。Y2O3 doping may substantially increase electrical performance of ZnO-Bi2O3 varistor such as reference voltage gradient and energy absorption capacity, but meanwhile give rise of leakage current. The impact of Y2O3 doping dosed 0-l.7%（mole fraction） at different sintering temperature on electrical performance of ZnO-Bi2O3 based varistor. The result shows that 0.68% Y2O3 doping （mole fraction）at sintering temperature of 1140℃ could result in high performance varistor with reference voltage gradient of 300 V/mm and energy absorption capacity of 370 J/cm^3. Moreover, FSM-based high resistance inorganic coating is more fit for lateral insulation of varistor with high gradient which gives coefficient of accelerate ageing KCT less than 1.

关 键 词：ZNO压敏电阻片 Y2O3掺杂 电位梯度 烧成温度 侧面绝缘 

分 类 号：TM54[电气工程—电器]