γ-咔唑基丙基三乙氧基硅烷的合成  

Synthesis of 3-carbazole Propyl Triethoxy Silane

作　　者：张文龙[1] 刘阔[2] 王暄[3] 赵洪[1] 戴亚杰[2] 

机构地区：[1]哈尔滨理工大学电气与电子工程学院,哈尔滨150040 [2]哈尔滨理工大学材料科学与工程学院,哈尔滨150040 [3]哈尔滨理工大学应用科学学院,哈尔滨150080

出　　处：《塑料助剂》2007年第1期29-32,共4页Plastics Additives

基　　金：国家自然科学基金(20302001);黑龙江省自然科学基金(E0328)

摘　　要：采用咔唑与γ-氯丙基三乙氧基硅烷亲核取代反应,合成了具有光导电性能的γ-咔唑基丙基三乙氧基硅烷(3-carbazole propyl triethoxy silane);通过Chem Office化学软件估算了反应物的电核密度,研究了其合成工艺,用红外及紫外光谱表征了合成产物。The 3-carbazolpropyl triethoxy silane which possesses light conductibility was synthesized by nucleophilic substitution between 3-chloropropyl triethoxy silane and carbazole. The electric-charge density of carbazole and the product was theoretically calculated through chemical software Chem Office. The process of synthesis of 3-carbazolpropyl triethoxy silane was analyzed, and its structure was characterized by UV spectrum and FT-IR.

关 键 词：咔唑 γ-咔唑基丙基三乙氧基硅烷 合成 

分 类 号：TQ264.11[化学工程—有机化工]