硅基集成光电子器件的新进展  

Progress on Si-Based Optoelectronic Devices and Integration

作　　者：周治平[1] 郜定山[1] 汪毅[1] 陈金林[1] 冯俊波[1] 

机构地区：[1]武汉光电国家实验室华中科技大学

出　　处：《激光与光电子学进展》2007年第2期31-38,共8页Laser & Optoelectronics Progress

摘　　要：综述了硅基微纳激光器、调制器、探测器及光传输控制器件的最新研究进展。重点阐述了表面等离子体、量子阱、光子晶体及纳米光栅等新型结构在提高器件综合性能和降低器件尺寸方面的重大作用。同时,还展示了用标准互补金属氧化物半导体(CMOS)技术,实现硅基光子器件和电子器件在同一基片上微纳集成的巨大前景。This paper summarizes the progresses in Si-based micro/nano lasers, modulators, detectors, and optical propagating and controlling devices. The emphasis is given to describe the important contributions of some novel structures such as surface plasmon, quantum well, photonic crystals and nano gratings on improving the properties and decreasing overall sizes of optoelectronic devices. The perspective of micro/nano scale monolithic integration of optical devices and electronic devices on a single chip by standard complementary mental oxide semiconductor （CMOS） technologies is also presented.

关 键 词：硅基光电子器件 微纳集成 激光器 调制器 探测器 纳米光栅 

分 类 号：TN256[电子电信—物理电子学]