用于脉冲γ强度测量的Ф60,1000μmPIN探测器  

Ф60,1000 μm Si-PIN Detectors for pulsed γ flux measurement

作　　者：欧阳晓平[1] 李真富[2] 霍裕昆[3] 宋献才[4] 

机构地区：[1]清华大学工程物理系,北京100084 [2]西北核技术研究所,西安710024 [3]复旦大学现代物理研究所,上海200433 [4]中国工程物理研究院电子学研究所,绵阳621900

出　　处：《物理学报》2007年第3期1353-1357,共5页Acta Physica Sinica

摘　　要：采用电阻率为10000-20000Ω·cm的高阻单晶硅材料，研制成功灵敏区尺寸为φ60mm，耗尽层厚度-1000μm的大面积厚PIN半导体探测器．设计了该类探测器厚度测量专用的反冲质子测量系统，对探测器的时间响应、γ灵敏度、漏电流、γ／n分辨等物理参数进行了测量和分析，结果表明，这类探测器可满足低强度裂变n/γ混合场中脉冲γ强度测量的需要．Using high-resistivity （10000-20000 Ω·cm） n-type Si wafers, we have developed 460 PIN semiconductor detector with depletion thickness -1000 microns for low-intensity pulsed γ-ray flux measurement. For determination of thickness of the depletion depths, a recoil proton chamber with 20% scattering angle has been constructed. The detector＇ s performance have been measured and analyzed, which indicates that the developed detector satisfactorily meets the expected specifications. Compared with the existing detectors with depletion depths of 200-300 microns, the detector has much greater γ detecting sensitivity and suited for measuring pulsed γ-my flux in low-intensity mixed γ/n fields.

关 键 词：大面积 电流型 半导体探测器 强度测量 

分 类 号：O572.212[理学—粒子物理与原子核物理]