掺Er/Er+O的GaN薄膜光学性质的研究  

Study on optical properties of Er/Er+O doped GaN thin films

作　　者：宋淑芳[1] 陈维德[2] 许振嘉[2] 徐叙瑢[1] 

机构地区：[1]北京交通大学光电子研究所,北京100044 [2]中国科学院半导体研究所,北京100083

出　　处：《物理学报》2007年第3期1621-1626,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60176025);国家重点基础研究发展计划项目(973计划)(批准号:2003CB314707);中国博士后科学基金资助课题(批准号:2005037302)资助的课题.~~

摘　　要：利用Raman散射谱研究了GaN注Er以及Er+O共注样品的振动模,并讨论了共注入O对Er离子发光的影响.在Raman散射谱中,对于注Er的GaN样品出现了300cm-1和670cm-1两个新的Raman峰,而对于Er+O共注样品,除了上述两个峰外,在360cm-1处出现了另外一个新的峰,其中300cm-1峰可以用disorder-activated Raman scattering(DARS)来解释,670cm-1峰是由于与N空位相关的缺陷引起的,而360cm-1峰是由O注入引起的缺陷络合物产生的.由于360cm-1模的缺陷出现,从而导致Er+O共注入GaN薄膜红外光致发光(PL)强度的下降.We extend the use of Raman spectroscopy to investigate the modes of Er-implanted and Er ＋ O co-implanted CaN, and discuss the influence of O ions on Er^3＋-related infrared photoluminescence （PL）. It is found that Er^3＋ implantation introduces new Raman peaks in Raman spectra at frequencies 300 and 670 cm^- 1, and one additional new peak at 360cm^- 1 is introduced after Er ＋ O implantation. It is proposed that the broad structure around 300 cm^-1 mode originates from disorder-activated scattering （DARS）. The Raman peak at 670 cm^-1 is assigned to nitrogen vacancy related defects. The 360 cm^-1 peak is attributed to the O implantation induced defect complexes （vacancies, interstitial, or anti-sites in the host）. The appearance of the 360 cm^- 1 mode results in the decrease of the Er3 ^＋ -related infrared PL of CaN ： Er ＋ O.

关 键 词：GaN ER RAMAN 散射 光致发光 

分 类 号：O484.41[理学—固体物理]