(Pb,La)TiO_3薄膜电畴生长的压电响应力显微镜研究  

Study on ferroelectric domain's growth of(Pb,La)TiO_3 films by piezoresponse force microscopy

作　　者：张海力[1] 王志红[1] 黄惠东[1] 黄嘉[1] 白凡[1] 郭晓华[2] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054 [2]中国人民解放军3303工厂质检处,湖北武昌430200

出　　处：《电子显微学报》2007年第1期24-27,共4页Journal of Chinese Electron Microscopy Society

基　　金：国家重大基础研究项目(No.51310207)

摘　　要：压电响应力显微镜为铁电薄膜电畴的研究提供了一种有效的检测方法。本实验用压电响应力显微镜(PFM)对不同退火温度的(Pb,La)TiO3铁电薄膜进行表征,得到了各个样品相应的形貌像、面外电畴像和面内电畴像。结果表明,随退火温度升高,(Pb,La)TiO3铁电薄膜的表面形貌表现出从粘连到结晶较好,到出现抱团的变化过程;此外,随退火温度升高,铁电薄膜的自发极化强度先增强后减弱。通过对这一系列铁电薄膜电畴进一步研究得到:在625℃退火1 h后,(Pb,La)TiO3铁电薄膜以非铁电相为主;而在650℃和675℃退火1 h后,(Pb,La)TiO3铁电薄膜以铁电相为主。The piezoresponse force microscopy （PFM） is a useful method to study ferroelectfic domains of ferroelectric films. Using PFM, the topography, OPP and IPP of （Pb, La）TiO3 samples after annealing at different temperatures were studied, respectively. The results indicated that the topography of （P b, La）TiO3 films changed form conglutination to good-crystallinty and then combination together as the annealing temperature increased. The spontaneous polarization of ferroelectric films was strengthened and then weakened with the increasing of annealing temperature. In addition, the （Pb, La）TiO3 film was mainly in a non-ferroelectfic phase after annealing for 1 h at 625℃ . However, the （Pb, La）TiO3 film was mainly in an ferroelectric phase after annealing for lh at 650℃ and 675 ℃ , respectively.

关 键 词：电畴 压电响应力显微镜 自发极化 

分 类 号：TB383.2[一般工业技术—材料科学与工程]