Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts  

版图结构对MOS器件总剂量辐照特性的影响(英文)

作　　者：李冬梅[1] 皇甫丽英[1] 勾秋静[1] 王志华[2] 

机构地区：[1]清华大学电子工程系,北京100084 [2]清华大学微电子学研究所,北京100084

出　　处：《Journal of Semiconductors》2007年第2期171-175,共5页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:60372021)~~

摘　　要：Both nMOS and pMOS transistors with two-edged and multi-finger layouts are fabricated in a standard commercial 0.6μm CMOS/bulk process to study their total ionizing dose （TID） radiation effects. The leakage current, threshold voltage shift, and transconductance of the devices are monitored before and after T-ray irradiation. Different device bias conditions are used during irradiation. The experiment results show that TID radiation effects on nMOS devices are very sensitive to their layout structures. The impact of the layout on TID effects on pMOS devices is slight and can be neglected.在商用标准0·6μm体硅CMOS工艺下,设计了采用普通单栅及多栅版图结构的nMOS和pMOS晶体管作为测试样品,讨论其经过γ射线照射后的总剂量辐照特性.辐照中器件采用不同电压偏置,并在辐照前后对器件的源漏极间泄漏电流、阈值电压漂移及跨导特性进行测量.研究表明nMOS总剂量效应对器件的版图结构非常敏感,而pMOS的总剂量效应几乎不受版图结构的影响.

关 键 词：MOS transistor layout total ionizing dose radiation effect 

分 类 号：TN386[电子电信—物理电子学]