利用线形液膜的红外热像测定GaAs的湿法化学腐蚀启动时长  

Duration of Startup of GaAs Wet Etching Measured by Infrared-Image of Linear Liquid Film

作　　者：刘霖[1] 叶玉堂[1] 吴云峰[1] 方亮[1] 陆佳佳[1] 陈镇龙[1] 

机构地区：[1]电子科技大学光电信息学院,成都610054

出　　处：《Journal of Semiconductors》2007年第2期222-226,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60277008);教育部(批准号:03147);国防科技重点实验室(批准号:514910501005DZ0201);电科院及四川省科技厅(批准号:04GG021-020-01)资助项目~~

摘　　要：提出了一种测定材料湿法刻蚀启动时长的红外热像新方法.该方法的实质是利用反应启动时必然有化学热吸收或释放,从而引起材料表面液层温度变化这一特点,通过红外热像实时监测系统,采集液层温度变化过程的红外热像,从而判断反应启动时长.理论分析和实验结果均表明,宽度为2mm的呈直线形状的GaAs表面酸性液膜是较为理想的监测对象,因其同时具备温度变化信息和空间分布信息,可以将线形液膜中心作为理想的观测特征点;由滑动液滴形成残留线形液膜可以得到超浅液膜,降低膜厚影响,温度变化灵敏度高,GaAs竖直放置,可以表面避免液膜重力对启动时长的影响,并经反复实验,由线形液膜的横向剖面灰度变化得到在本实验条件下,GaAs材料与H2SO4∶H2O2∶H2O(5∶1∶50)腐蚀液的反应启动时长约为0.2s.该方法的提出,对于化学反应时间控制、快速腐蚀技术以及化学吸附等性能研究均具有重要价值.A new infrared measurement method for determining the duration of the startup of GaAs wet etching is proposed. The basis of this method is that the temperature variation of an etchant film is induced by the absorption or release of chemical heat during the startup of the reaction. The startup time can be determined by the real-time collection of infrared thermal images over the course of the temperature variation. Theoretical analysis and experimental results show that 2mm-wide linear liquid film is suitable for monitoring because it contains the information of temperature and space change. Thus the center of the liquid film can be set as a characteristic observation point. More accurate experimental data can be obtained because of the high sensitivity of temperature change of the extremely thin linear film made by sliding droplets as well as the avoidance of the influence of film weight on the startup time by using upright GaAs substrate. The startup time of the reaction between GaAs substrate and H2SO4 ： H2O2 ： H2O（ = 5 ： 1 ： 50）is about 0.2s,as obtained from the grey-scale variation of a certain cross section of the linear liquid film. The proposed method will stimulate the research of quick etching technology and absorption capability between solids and liquids.

关 键 词：砷化镓 腐蚀 红外辐射 实时监测 液滴 

分 类 号：TN304.05[电子电信—物理电子学]