一种新颖的高电源抑制比亚阈值MOSFET电流基准源  

A Novel Current Reference Source with High PSRR Based on Subthreshold MOSFET's

作　　者：余国义[1] 邹雪城[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《微电子学》2007年第1期113-117,共5页Microelectronics

摘　　要：基于亚阈值MOSFET,提出了一种新颖的高电源抑制比(PSRR)电流基准源。基准电路充分利用工作在亚阈值区MOSFET的I-V跨导特性和改进的具有高负反馈环路增益预电压调制,为电流基准核电路提供电源。电路设计采用SMIC 0.18μm标准CMOS数字工艺技术。在1.5 V电源电压下,电路输出1.701μA的稳定电流,在-40℃到150℃温度范围内,具有非常低的温度系数(2.5×10-4μA/℃);并且,在宽泛的频率范围内,具有很好的电源噪声抑制能力。电源抑制比在dc频率为-126 dB,在高于1 MHz频率范围内,仍能保持-92 dB。基准电路在高于1.2V电源电压下可以稳定工作,并具有很好的CMOS工艺兼容性。A novel current reference source based on subthreshold MOSFET＇s with high power supply rejection ratio （PSRR） is presented. The proposed circuit takes full advantages of the I-V transconductance characteristics of MOSFET operating in the subthreshold region and the enhanced pre-regulator with high gain negative feedback loop to supply power for the current reference core circuit. Designed with SMIC＇s 0. 18 μm standard CMOS digital process technology, the circuit exhibits a stable current of about 1. 701 μA with a very low temperature coefficient （2.5×10^-4 μA/℃） in the temperature range from -40 ℃ to 150 ℃ at 1.5 V supply voltage, and also achieves a best PSRR over a broad frequency range, which is about -126 dB at dc and maintains -92 dB at 1 MHZ and above The proposed circuit operates stably at supply voltage higher than 1.2 V and it has a good process compatibility.

关 键 词：电流基准源 电压调制器 亚阈值MOSFET CMOS集成电路 

分 类 号：TN432[电子电信—微电子学与固体电子学]