双层量子点中的带负电荷激子(英文)  

The negatively charged exciton in double-layer quantum dots

作　　者：黄锦胜[1] 解文方[1] 

机构地区：[1]广州大学物理与电子工程学院,广东广州510006

出　　处：《广州大学学报（自然科学版）》2007年第1期29-33,共5页Journal of Guangzhou University:Natural Science Edition

基　　金：国家自然科学基金资助项目(10475021);广东省自然科学基金资助项目(04009519)~~

摘　　要：利用精确对角化方法,研究了抛物势双层量子点中带负电荷激子的1S态和3P态的关联能与量子点的束缚势大小的变化关系,以及1S态对应几个不同的量子点间点与点的距离的束缚能随束缚势大小的变化关系,计算了电子与空穴质量比为σ=0.677和σ=0.197的缚能随束缚势大小的变化关系.The Hamiltonian equation for charged semiconductor complexes in a double-layer harmonic quantum dots was solved numerically by using the exact diagonalization techniques. By using this method, we have calculated the energy spectra of the ground state and first excited state of a charged exciton as a function of the confinement strength of the quantum dot and the binding energy spectra of the ground state as a function of the confinement strength of the quantum dot for a few values of the distance between the vertically coupled dots and the electron-to-hole mass ratio.

关 键 词：双层量子点 带负电荷激子 关联能 束缚能 

分 类 号：O413[理学—理论物理]