IC缺陷轮廓多分形特征研究  

The Study of Multifractal Characterization of IC Defect Outline

作　　者：孙晓丽[1] 郝跃[1] 宋国乡[1] 

机构地区：[1]西安电子科技大学理学院,西安710071

出　　处：《电子与信息学报》2007年第2期496-498,共3页Journal of Electronics & Information Technology

基　　金：国家863计划VLSI重大专项(2003AA1Z1630)资助课题

摘　　要：IC真实缺陷轮廓曲线的形状特征对集成电路成品率预报及故障分析有重要影响。该文提出缺陷轮廓曲线具有多分形特征,以某一真实缺陷为例,用小波变换模极大(WTMM)的方法估计了其轮廓曲线参数方程的多分形谱,该结果为硅片表面缺陷的精细表征及其计算机模拟作了有益探索。The shapes of real defect outline usually play an extremely important role in the yield prediction and inductive fault analysis of Integrated Circuits （IC）. In this paper, the multifractal characterizations of real defect outlines are discussed, and the multifractal spectrum of one typical real defect outline is estimated by the method of Wavelet Transform Modulus Maximum（WTMM）, the results obtained in this paper will be useful for a fine characterization and computer simulation of the defects on wafer.

关 键 词：IC缺陷轮廓 小波变换模极大 多分形谱 尺度指数 

分 类 号：TN43[电子电信—微电子学与固体电子学]