背腐蚀法分离p-n结的研究  

STUDY ON THE p-n JUNCTION SEPARATION BY BACK ETCHING

作　　者：刘志刚[1] 孙铁囤[1] 苦史伟[1] 罗培青[1] 姜维[1] 徐秀琴[1] 崔容强[1] 

机构地区：[1]上海交通大学太阳能研究所,上海200240

出　　处：《太阳能学报》2007年第2期165-168,共4页Acta Energiae Solaris Sinica

基　　金：上海市科委项目"高效多晶硅太阳电池关键技术及中试研究"的奖金支持项目(03DZ12028)

摘　　要：采用正面无保护的背腐蚀方法分离p-n结,用SEM图观察了背腐蚀后硅片表面形貌的变化,对背腐蚀与刻边分离p-n结样品的光生电动势进行了比较,用能带理论对其差别做了深入的解释。Separating p-n junction by using of back etching method without surface protect was studied, also the surface by SEM pictures. The photo-induced voltage between the back etching and edge etching silicon were compared, explaining the difference by means of the theory of energy bands.

关 键 词：背腐蚀 光生电动势 能带 

分 类 号：TB611[一般工业技术—制冷工程]