Si/SiGe PMOSFET USING P^+ IMPLANTATION TECHNOLOGY  

作　　者：Tan Jing Li Jingchun Xu Wanjing Zhang Jing Tan Kaizhou YangMohua 

机构地区：[1]Dept of Microelectronics and Solid-State Electronics, Univ. of Electronic Science and Tech. of China, Chengdu 610054, China [2]National Key Laboratory of Analog IC, Chongqing 400060, China

出　　处：《Journal of Electronics(China)》2007年第1期100-103,共4页电子科学学刊（英文版）

基　　金：Supported by the Funds of National Key Laboratory of Analog IC (2000JS09.3.1.DZ02).

摘　　要：Si/SiGe P-channel Metal-Oxide-Semiconductor Field Effect Transistor (PMOSFET) using P+ (phosphor ion) implantation technology is successfully fabricated. P+ implantation into SiGe virtual substrate induces a narrow defect region slightly below the SiGe/Si interface,which gives rise to strongly enhanced strain relaxation of SiGe virtual substrate. X-Ray Diffraction (XRD) tests show that the degree of relaxation of SiGe layer is 96% while 85% before implantation. After annealed,the sample appeared free of Threading Dislocation densities (TDs) within the SiGe layer to the limit of Trans-mission Electron Microscopy (TEM) analysis. Atomic Force Microscope (AFM) test of strained Si channel surface shows that Root Mean Square (RMS) is 1.1nm. The Direct Current (DC) characters measured by HP 4155B indicate that the maximum saturated transconductance is twice bigger than that of bulk Si PMOSFET.Si/SiGe P-channel Metal-Oxide-Semiconductor Field Effect Transistor （PMOSFET） using P^＋ （phosphor ion） implantation technology is successfully fabricated. P^＋ implantation into SiGe virtual substrate induces a narrow defect region slightly below the SiGe/Si interface, which gives rise to strongly enhanced strain relaxation of SiGe virtual substrate. X-Ray Diffraction （XRD） tests show that the degree of relaxation of SiGe layer is 96% while 85% before implantation. After annealed, the sample appeared free of Threading Dislocation densities （TDs） within the SiGe layer to the limit of Transmission Electron Microscopy （TEM） analysis. Atomic Force Microscope （AFM） test of strained Si channel surface shows that Root Mean Square （RMS） is 1.1nm. The Direct Current （DC） characters measured by HP 4155B indicate that the maximum saturated transconductance is twice bigger than that of bulk Si PMOSFET.

关 键 词：SiGe P-channel Metal-Oxide-Semiconductor Field Effect Transistor （PMOSFET） P^＋implantation relaxation 

分 类 号：TN386.1[电子电信—物理电子学]