不同靶材制备TaN单层薄膜的晶体结构与力学性能  被引量:3

On the Crystal Structure and Properties of TaN Monolithic Coatings Based on Different Targets

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作  者:张学华[1] 曹猛[1] 杨瑾[1] 刘桐[1] 李德军[1] 

机构地区:[1]天津师范大学物理与电子信息学院,天津300074

出  处:《天津师范大学学报(自然科学版)》2007年第1期10-12,共3页Journal of Tianjin Normal University:Natural Science Edition

基  金:国家自然科学基金(50472026);天津市应用基础研究重点项目(043801011)

摘  要:以钽氮化物为个体层材料,利用FJL560CI2型超高真空射频磁控与离子束联合溅射系统,制备以TaN和金属Ta为靶材的两种TaN单层薄膜.通过XRD和纳米力学测试系统分析它们的晶体结构和TaN靶材对薄膜机械性能的影响.结果表明,TaN靶材制备的TaN单层膜的纳米硬度值普遍高于Ta靶材的;当工作气压为0.4 Pa时,TaN单层膜的硬度最大,即35.4 GPa,其结晶出现多元化,使单层膜的硬度、弹性模量以及膜基结合性能均达到最佳.Two kinds of TaN monolithic coatings with TaN and Ta as sputtering targets on monocrystal Si chip were prepared by using FJL560CI2 ultra-high vacuum radio freqency magnetron sputtering chamber. XRD, Nano indenter and profiler were employed to investigate the influence of the TaN target on microstructure, mechanical properties of the coatings. The results showed that TaN coatings based on TaN target had higher nanohardness than the ones based on Ta target. When the work pressure was 0. 4 Pa, the highest hardness of TaN coating reached to 35. 4 GPa. The coating based on TaN target at this condition possessed more excellent hardness, elastic modulus, fracture resistance than the ones using Ta target.

关 键 词:射频磁控溅射 TaN单层膜 TaN靶材 Ta靶材 

分 类 号:TG174.444[金属学及工艺—金属表面处理]

 

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