Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs  

作　　者：曹艳荣 马晓华 郝跃 张月 于磊 朱志炜 陈海峰 

机构地区：[1]School of Microelectronics, Xidian University, Xi'an 710071, ChinaKey Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China

出　　处：《Chinese Physics B》2007年第4期1140-1144,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China （Grant No 60376024） and the National High Technology Research and Development Program of China （Grant No 2003AA1Z1630）. The authors thank SMIC for the supply of test devices.

摘　　要：Taking the actual operating condition of complementary metal oxide semiconductor （CMOS） circuit into account, conventional direct current （DC） stress study on negative bias temperature instability （NBTI） neglects the detrapping of oxide positive charges and the recovery of interface states under the ＇low＇ state of p-channel metal oxide semiconductor field effect transistors （MOSFETs） inverter operation. In this paper we have studied the degradation and recovery of NBTI under alternating stress, and presented a possible recovery mechanism. The three stages of recovery mechanism under positive bias are fast recovery, slow recovery and recovery saturation.Taking the actual operating condition of complementary metal oxide semiconductor （CMOS） circuit into account, conventional direct current （DC） stress study on negative bias temperature instability （NBTI） neglects the detrapping of oxide positive charges and the recovery of interface states under the ＇low＇ state of p-channel metal oxide semiconductor field effect transistors （MOSFETs） inverter operation. In this paper we have studied the degradation and recovery of NBTI under alternating stress, and presented a possible recovery mechanism. The three stages of recovery mechanism under positive bias are fast recovery, slow recovery and recovery saturation.

关 键 词：NBTI RECOVERY interface states oxide positive charges 

分 类 号：TN386.1[电子电信—物理电子学]