基于元胞自动机的磁性薄膜生长模拟  

Simulation of Magnetic Thin Film Growth Based On Cellular Automata

作　　者：王昊[1] 廖聪维[1] 吴保磊[1] 叶雪枫[1] 杨晓非[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《磁性材料及器件》2007年第1期26-29,共4页Journal of Magnetic Materials and Devices

基　　金：国家自然科学基金资助项目(60571010)

摘　　要：基于原子嵌入法,用元胞自动机方法模拟了Co(密排六方结构)薄膜的生长。仿真中引入了溅射原子的沉积、迁移扩散和再蒸发三个主要的过程。发现溅射功率和基底温度对薄膜表面所形成岛核的形态影响很大,定量计算了变化温度下岛的原子扩散速率以及当溅射功率和基底温度变化时岛的均匀度。给出了对于实验有指导意义的结论。Based on embedded atom method （EAM） theory, thin film growth of Co with hcp structure was simulated using cellular automata （CA） method on computer. In our model, three processes were considered： particle deposition, adatom diffusion and adatom reevaporation. The simulation showed that the island morphology of the film surface is greatly affected by sputtering power and substrate temperature. The diffusion constants of adatom at various temperatures and the islands uniformity at different temperatures and sputtering powers has been calculated. The results are guidable for thin film deposition experiments.

关 键 词：元胞自动机 原子嵌入法 Co薄膜生长 模拟 

分 类 号：O484.1[理学—固体物理]